Molecular Dynamics Simulations of Energy Deposition in Solids

作者: M.J. Caturla , A. Gras Martı́ , J.J. Jiménez-Rodrı́guez , J.-C. Jiménez Saez , M.-C. Pérez-Martı́n

DOI: 10.1016/S0065-3276(04)45004-7

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摘要: Abstract Molecular dynamics (MD) simulations have been used since the early 1960s to study interaction of energetic particles (up 100s keV) with solids for a large variety applications. In this article we briefly describe MD methodology particular case atomic collisions in solids. As examples systems and processes that can be studied using technique present three results, related relevant industrial First how defects produced during implantation dopants semiconductors, these results develop models semiconductor technology. Secondly an overview radiation damage effects metals relating them degradation their mechanical properties. Finally, recent field research has emerged promises important changes materials, so-called nanotechnology. is particularly useful occurring at scale therefore it widely nanoscale. We application nanocluster interfaces. To conclude, few remarks are made regarding future

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