Sensing IGBT junction temperature using gate drive output transient properties
作者： He Niu , Robert D. Lorenz
DOI: 10.1109/APEC.2015.7104700
关键词:
摘要: Insulated Gate Bipolar Transistor (IGBT) junction temperature sensing is normally achieved with a detector. To optimize accuracy, the detectors are placed very close to power semiconductor chip or embedded on die. This inconvenient for integration and requires further consideration high voltage, current, EMI protection, detector's thermal-mechanical stress. paper presents non-invasive method that integrates into IGBT gate drive enables bandwidth sensing. In order demonstrate sensing, an module implemented in H-bridge, driven by four push-pull type drives. The switching transient properties used estimation. “gate drive-IGBT” modeled explain junction-temperature-dependent output dynamics. A hardware implementation extraction provided. Experimental results compared circuit Spice model simulation.
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