Hafnium tantalum oxynitride high-k dielectric and metal gates
作者： Leonard Forbes , Arup Bhattacharyya , Kie Y. Ahn
DOI:
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摘要: Electronic apparatus and methods may include a hafnium tantalum oxynitride film on substrate for use in variety of electronic systems. The be structured as one or more monolayers. formed using atomic layer deposition. Metal electrodes disposed dielectric containing film.
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