Nanowire photo-detector grown on a back-side illuminated image sensor

作者: Young-June Yu , Munib Wober

DOI:

关键词:

摘要: An embodiment relates to a device comprising substrate having front side and back-side that is exposed incoming radiation, nanowire disposed on the an image sensing circuit side, wherein configured be both channel transmit wavelengths up selective wavelength active element detect transmitted through nanowire.

参考文章(502)
Denis Striakhilev, Arokia Nathan, Sheng Tao, Yuri Vygranenko, A pixel having an organic light emitting diode and method of fabricating the pixel ,(2004)
Bruce A. Block, Brandon C. Barnett, On-chip optical signal routing ,(2003)
Atsushi Matsumoto, Ryo Ota, Etsuro Shimizu, Kazuya Matsumoto, Fluorescence sensor, needle-type fluorescence sensor, and method for measuring analyte ,(2010)
Fengnian Xia, Stephen Walter Bedell, Yurii A. Vlasov, Solomon Assefa, Optoelectronic Device with Germanium Photodetector ,(2007)