作者: Chun-Sheng Liang , Jenn-Ming Wu , Ming-Chu Chang
DOI: 10.1063/1.1520332
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摘要: BaPbO3 (BPO)/PbZr0.53Ti0.47 (PZT)/BPO heterostructures were fabricated by combining the sol-gel and rf-magnetron sputtering techniques. Experimental results indicate that BPO bottom electrodes effectively prevent formation of rosette structure PZT, producing smooth surfaces. Additionally, ferroelectric, fatigue, leakage current properties markedly improved when both top changed from Pt to BPO. These improvements are due a superior electrode/ferroelectric interface. is better than other oxide for use in PZT ferroelectric capacitors its remarkably quite low growth temperature.