A Low-Noise Charge Sensitive Preamplifier for Semiconductor Detectors Using Paralleled Field-Effect-Transistors

作者: K. F. Smith , J. E. Cline

DOI: 10.1109/TNS.1966.4324132

关键词:

摘要: … from flicker noise in the FET input stage, the total noise in the … (a) the thermal noise of the conducting channel modified by … a noise current which flows in the gate and is caused by noise …

参考文章(7)
E. Elad, A preamplifier with 0.7 keV resolution for semiconductor radiation detectors Nuclear Instruments and Methods. ,vol. 37, pp. 327- 329 ,(1965) , 10.1016/0029-554X(65)90383-6
J. L. Blankenship, Design of Low-Noise Vacuum-Tube Pulse Amplifiers for Semiconductor Radiation-Detector Spectroscopy IEEE Transactions on Nuclear Science. ,vol. 11, pp. 373- 381 ,(1964) , 10.1109/TNS.1964.4323450
T.W. Nybakken, V. Vali, A hybrid preamplifier for cooled lithium ion-drifted semiconductor detectors Nuclear Instruments and Methods. ,vol. 32, pp. 121- 124 ,(1965) , 10.1016/0029-554X(65)90484-2
A. Van Der Ziel, Gate noise in field effect transistors at moderately high frequencies Proceedings of the IEEE. ,vol. 51, pp. 461- 467 ,(1963) , 10.1109/PROC.1963.1849
R. L. Heath, W. W. Black, J. E. Cline, Instrumental Requirements for High-Resolution Gamma-Ray Spectrometry Using Lithium-Drifted Germanium Detectors IEEE Transactions on Nuclear Science. ,vol. 13, pp. 445- 456 ,(1966) , 10.1109/TNS.1966.4324130
A. Der Ziel, Thermal Noise in Field-Effect Transistors Proceedings of the IRE. ,vol. 50, pp. 1808- 1812 ,(1962) , 10.1109/JRPROC.1962.288221
V. Radeka, The field-effect transistor-its characteristics and applications IEEE Transactions on Nuclear Science. ,vol. 11, pp. 358- 364 ,(1964) , 10.1109/TNS.1964.4323448