Influence of rapid thermal annealing and internal gettering on Czochralski-grown silicon. I. Oxygen precipitation
作者： C. Maddalon‐Vinante , E. Ehret , D. Barbier
DOI: 10.1063/1.361141
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摘要: The effect of rapid thermal annealing at 1200 °C as a pretreatment on the precipitation oxygen during three‐step internal gettering process is studied thanks to infrared analyses. influence both duration and ambient this considered. We define limit from which further greatly enhanced through path leading formation quasispherical precipitates different platelets. It also shown that hydrogen introduced anneal delays process. Finally, considering inefficiency chromium after under argon/hydrogen, new interpretation proposed: would produce modification in path, not be suitable for an efficient effect.
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