Effects of doping Ti3SiC2 with Al on interfacial microstructural evolution, growth kinetics and mechanical properties of Ti3SiC2/TiAl joints
作者： Qi Wang , Guo-qing Chen , Kang Wang , Xue-song Fu , Wen-long Zhou
DOI: 10.1016/J.JMRT.2020.09.064
关键词:
摘要: Abstract Investigations of the interfacial microstructural evolution, growth kinetics, and mechanical properties in Al-doped joint can derive guidelines for knowledge-based parameter optimization dissimilar Ti3SiC2/TiAl joining process. The kinetics joints was greatly altered by doping Ti3SiC2 with Al. interface Ti3(Si0.94Al0.06)C2/TiAl Ti3(Si0.91Al0.09)C2/TiAl changed from γ + α2/TiAl3 + Ti5Si3 + Ti5Si4/Ti3SiC2 to γ + α2/TiAl2/TiAl3 + Ti5Si3 + Ti5Si4/Ti3SiC2, γ + α2/γ/TiAl2/TiAl3 + Ti5Si3 + Ti5Si4/Ti3SiC2, γ + α2/γ/TiAl2/TiAl3 + Ti5Si3 + Ti5Si4/Ti5Si3/Ti3SiC2 as bonding temperature duration increased. compound layer followed cubic law controlled grainboundary diffusion. Al mainly diffusion elements joints, its Ti3(Si,Al)C2 substrate both along grainboundaries. activation energies were about 180 kJ/mol, which much lower than value (225 kJ/mol) undoped joint. highest shear strength 65 MPa 23% higher
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