Single-mask, three-dimensional microfabrication of high-aspect-ratio structures in bulk silicon using reactive ion etching lag and sacrificial oxidation

摘要: This letter describes a simple method for three-dimensional microfabrication of complex, high-aspect-ratio structures with arbitrary surface height profiles in bulk silicon. The relies on the exploitation reactive ion etching lag to simultaneously define all features using single lithographic masking step. Modulation mask pattern openings used results etch depth variation across pattern, which is then translated into through removal superstructure above etched floors. Utilization nonisotropic based sacrificial oxidation enables definition vertical sidewalls and fine features. utility approach demonstrated fabrication sloping electrode structure application hybrid micromirror device.