Selective Growth and In Situ Transfer of Graphene on GaN Using Patterned SiO2Supporting Layers
作者： Hye-Jin Kwon , Jang-Won Kang , Sang-Hyun Hong , Na-Yeong Kim , Seong-Ju Park
DOI: 10.1149/2.0051512JSS
关键词:
摘要: We report the selective growth and in-situ transfer of graphene on a gallium nitride layer in solution using patterned SiO2 supporting layers. The line-patterned multilayer was selectively transferred onto target substrate without producing damage defect graphene. Furthermore, yield greatly increased compared to that by conventional method adhesion also improved solution. © 2015 Electrochemical Society. [DOI: 10.1149/2.0051512jss] All rights reserved.
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