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摘要: Chalcogenide glasses or amorphous semiconductors are the attractive materials for optoelectronics investigations. Surface morphology and crystallization kinetics parameters play an important role to define their possible uses. In such a metal containing multicomponent alloy offers fractured surface morphology. Therefore, this work deals morphologies of Se93−xZn2Te 5Inx (0 ≤ x 10) chalcogenide alloys. These have been exhibited glass transition