Reflected waves and their associated current [in IGBT VSIs]
作者： D. Leggate , J. Pankau , D.W. Schlegel , R.J. Kerkman , G.L. Skibinski
DOI: 10.1109/28.806053
关键词:
摘要: Reflected-wave transient voltages that result from fast insulated gate bipolar transistor (IGBT) voltage-source inverters have received considerable investigation. The modeling and simulation of these transients require sophisticated motor cable models. Most pulsewidth modulated (PWM) adjustable-speed drive suppliers now provide combinations passive active control techniques to mitigate the adverse effects overvoltage stress, however, costs fixes often exceed cost drive. Another aspect low-rise-time devices, heretofore not examined extent problem, is resulting current traveling waves. In this paper, a historical perspective problem presented. Models system components are reviewed, results compared with experimental results. These models then employed predict peak currents as cable, load, IGBT rise time altered. paper will examine consequences reflected wave on sensing, device performance. From results, minimum established.
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