作者: VV Uglov , G Abadias , SV Zlotski , NT Kvasov , IA Saladukhin
DOI: 10.1016/J.SURFCOAT.2018.02.095
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摘要: Abstract The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed a vacuum at 600 °C. Multilayer were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. deposited sequential sputtering from elemental Zr Si3N4 targets substrate temperature 300 °C, ZrN SiNx layer thickness varying 2 10 nm. According transmission electron microscopy (TEM), consist nanocrystalline (002)-oriented amorphous layers. Surface morphology changes 600 °C studied scanning (SEM) atomic-force (AFM) methods. It has been found that irradiation remain resistant blistering flaking up fluence 8·1016 cm−2. investigations have shown influence crystalline thicknesses character damage degree surface as result post-radiation annealing In this potential processes (mechanisms) flacking systems are discussed.