Low−temperature irradiation effects in SiO2−insulated MIS devices
作者： E. Harari , S. Wang , B. S. H. Royce
DOI: 10.1063/1.321698
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摘要: The storage of positive charge in the SiO2 insulator MIS devices has been studied at both 300 and 80 K. It found that additional is stored oxide as a result low−temperature x irradiation behaves differently from induced by room−temperature irradiation. This may be removed photodepopulation techniques, field emission, thermal annealing. portion which present K shown to insensitve these treatments under same experimental conditions. data indicate observed behavior not due ion transport within strongly suggests hole occurring. Models for trapping sites role surface states are discussed.
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