The electrical properties and the magnitude of the indirect gap in the semiconducting transition metal dichalcogenide layer crystals
作者： A J Grant , T M Griffiths , G D Pitt , A D Yoffe
DOI: 10.1088/0022-3719/8/1/004
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摘要: Room-temperature electrical resistivity and Hall effect measurements as a function of pressure are reported on p-type MoS 2 and on n-type MoS 2, MoSe 2 and MoTe 2. In each case, the resistivity decreases under pressure, due to an increase in the carrier concentration. The Hall mobility is relatively pressure-independent. The data are consistent with the predominance of extrinsic conduction in these semiconductors until well above room temperature. The impurity activation energy and its pressure dependence are given …
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