Barrier-type anodic film formation on an Al-3.5 wt% Cu alloy

摘要: Barrier-type anodic film formation on a bulk Al-3.5 wt% Cu alloy has been examined by analytical transmission electron microscopy. Anodic alumina proceeds in the usual way, with Al3+ egress and O2−ingress across pre-existing under high electric field. Copper species are incorporated into at alloy/film interface have greater mobility field than outwardly mobile aluminium cations; absence of any enrichment copper film/electrolyte also suggests their direct ejection electrolyte. The incorporation is related to clustering processes which lead significant interfacial its local oxidation form relatively short-lived oxide fingers. generation fine clusters preferential oxidation, subsequent reformation as result adjacent matrix, explain narrow region interface.