Photoelectric conversion apparatus, producing method therefor, image pickup module and image pickup system

作者: Sakae Hashimoto

DOI:

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摘要: A photoelectric conversion apparatus has a plurality of elements arranged on semiconductor substrate, wiring layers the substrate through first and second insulation layers, high refractive index region which is in an opening part that interlayer layer so as to correspond element higher than wherein area cross section parallel photoreceiving plane increases position approaches upper from element, namely, light-incident plane, increasing rate continuously with increase area.

参考文章(17)
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Ki-Chul Park, Soo-Geun Lee, Kyoung-Woo Lee, Structure of a CMOS image sensor and method for fabricating the same ,(2004)
Hiroshi Yuzurihara, Akira Ohtani, Koichi Tazoe, Sakae Hashimoto, Manufacturing method for image pickup apparatus ,(2006)
Yoshiyuki Enomoto, Tetsuya Komoguchi, Solid-state imaging device and production method therefor ,(2003)
Mahito Shinohara, Seiji Hashimoto, Mamoru Miyawaki, Shigetoshi Sugawa, Photoelectric conversion apparatus with reresh voltage ,(1990)