Cyclotron resonance in InAs/GaSb heterostructures
作者： G M Sundaram , R J Warburton , R J Nicholas , G M Summers , N J Mason
DOI: 10.1088/0268-1242/7/7/018
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摘要: Cyclotron resonance measurements are reported for both electrons and holes in type II InAs/GaSb superlattices double heterostructures (DHETS). Superlattice (multi quantum well) samples of grown by MOVPE have sufficiently high hole gas mobilities densities to allow the first cyclotron this system. The measured masses approximately 0.1me 0.2me, indicating a large reduction over bulk values due decoupling valence band strain confinement. This is good agreement with eight-band k . p theory here, previous calculations. electron DHETS found be strongly influenced non-parabolicity carrier concentration, leading considerable increases edge values. Similar structures along (001) (111)A directions.
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