Semiconductor interlayer dielectric material and a semiconductor device using the same

摘要: The present invention relates to low a dielectric material essential for next generation semiconductor with high density and performance, more particularly that is thermally stable has good film-forming properties excellent mechanical properties, film comprising the material, device manufactured using film. also provides an organic silicate polymer having flexible bridge unit in network prepared by resin composition of component (a) (b), wherein organosilane formula R1 mR2 nSiX4−m−n (where each R2 which may be same or different, non-hydrolysable group; X hydrolysable m n are integers from 0 3 satisfying 0≦m+n≦3) and/or partially hydrolyzed condensate thereof (b) bridged silane R3 pY3−pSi-M-SiR4 qZ3−q R4 Y Z p q 2) cyclic oligomer (Si-M-Si).