作者: Luca Bertoluzzi , Pilar Lopez-Varo , Juan Antonio Jiménez Tejada , Juan Bisquert
DOI: 10.1039/C5TA03210E
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摘要: Knowledge of the nature of charge transfer processes at the semiconductor/electrolyte interface is crucial for the optimization of semiconductors used for solar fuel production. In the literature, there are two types of charge transfer mechanisms:(i) direct hole transfer from the valence band and (ii) indirect hole transfer via surface states. In this paper, we discuss both processes in the steady state regime through full drift-diffusion simulations considering the concomitant influence of the electric field and surface states at the semiconductor …