作者: Eiji Takeda , Cary Y Yang , Cary Y-W Yang , Akemi Miura-Hamada
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摘要: (Chapter Headings): MOS Device Fundamentals. Hot-Carrier Injection Mechanisms. Degradation. AC and Process-Induced Effects. Effects at Low Temperature Voltage. Dependence of Phenomena on Structure. As-P Double Diffused Drain (DDD) Versus Lightly Doped (LDD) Devices. Gate-to-Drain Overlatpped Devices (GOLD). References. Index.