Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5

摘要: Micron- and submicron-size changes induced by local laser heating in thin films of Ge2Sb2Te5 are studied atomic force microscopy (AFM). This material is presently used for rewritable data storage that employs phase change recording. Reversible switching between the amorphous crystalline states, which accompanied a considerable optical properties film density, exploited to store bits information. The density can be detected AFM, we use here study amorphization (writing) recrystallization (erasure) single bits. Both processes have been measured as function modification pulse power duration. Morphology even if covered protective layer. AFM allows precise determination bit size depth, characterizes progress direction surface normal. present setup correlation reflectance ΔR caused b...