Ti:sapphire planar waveguide laser grown by pulsed laser deposition.

作者: A. A. Anderson , R. W. Eason , L. M. B. Hickey , M. Jelinek , C. Grivas

DOI: 10.1364/OL.22.001556

关键词:

摘要: This paper documents the lasing performance of a waveguiding layer Ti:sapphire, ~12µm thickness, grown by pulsed laser deposition from 0.12 wt % Ti2O3 Ti:sapphire single crystal target onto an undoped z-cut sapphire substrate. Lasing around 800nm is observed, when waveguide pumped argon ion laser, running on all blue green lines, with absorbed power threshold 0.56W using high reflectivity (R>98%) mirrors. Using 5% pump duty cycle and T = 35% output coupler, slope efficiency 26% respect to obtained, giving quasi-CW powers in excess 350mW.

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