作者: Han Li , Xinfeng Tang , Qingjie Zhang , Ctirad Uher
DOI: 10.1063/1.3099804
关键词:
摘要: n-Type skutterudites InxCeyCo4Sb12 with in situ forming nanostructured InSb phase have been prepared by a melt-quench-anneal-spark plasma sintering method. Doping of In results the grain size 10–80 nm that is evenly distributed on boundaries skutterudite matrix. The has strong influence phonon scattering and leads to notable suppression lattice thermal conductivity InxCeyCo4Sb12. combined effect Ce doping high performance materials. highest thermoelectric figure merit ZT=1.43 achieved at 800 K In0.2Ce0.15Co4Sb12 compound.