Chapter 14 Stimulated Emission in Semiconductor
作者： Frank Stren
DOI: 10.1016/S0080-8784(08)60172-6
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摘要: Publisher Summary This chapter discusses the aspects of stimulated emission in case semiconductor lasers. Because most work has been done on gallium arsenide injection lasers, GaAs are used as example and model. Keyes pointed out that an understanding laser operation requires a chemical model, electrical thermal optical These consider, turn, impurity profile its production; flow electrons holes; heat flow; electronic transitions involved recombination, quantum efficiency, electromagnetic modes laser. The all these models but focuses It relation between spontaneous semiconductors describes structure, both geometrical, some many types lasers have made proposed characteristics their emission. also considers mode directionality, coherence radiation emitted by Quantum above below threshold, is discussed chapter. effect properties threshold current other experimentally observed considered In chapter, materials than recent excitation electron beams referred. effects temperature, pressure, strain, magnetic field
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