作者: Ashok N. Prabhu , Kenneth W. Hang , Wayne M. Anderson
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摘要: An improved dielectric formulation for the fabrication of multilayer, integrated circuits which comprises a devitrifying zinc-magnesium-barium-aluminum-zirconium-phosphosilicate glass frit, zinc-magnesium-barium-aluminum-silicate or zinc-magnesium-strontium-aluminum-silicate frit are stabilized by presence from about 0.01 to 1 weight percent each lead oxide and iron oxide.