Formation of submicron silicon-on-insulator structures by lateral oxidation of substrate-silicon islands

摘要: Fully isolated islands have been formed in silicon using selective, lateral thermal oxidation at the base of 250‐nm‐wide structures. The final structure consists substrate on oxide silicon. process begins with definition that are capped top and sidewall a dioxide/silicon nitride mask. is then isotropically or anisotropically recess etched thermally oxidized to produce islands. Our experiments show quality silicon‐on‐insulator depends mask, island dimension, profile etch, time temperature. degree isolation can be tailored by controlling filament connecting underlying substrate. By this technique we filaments 10 100 nm width.