GaSb and InAs: New Materials for Metal-Semiconductor Point-Contact Diodes
作者： Giorgio Carelli , A De Michele , M Finotti , K Bousbahi , N Ioli
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摘要: Metal-semiconductor point contact diodes have proved to be good detectors and mixers for radiation from the far-infrared visible. Until now GaAs, InSb InP are most studied used semiconductor materials these devices. In this work we present performance in visible infrared region metal-semiconductor point-contact with GaSb or InAs as layers. These two new shown characteristics.
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