Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity
作者： P. D. C. King , I. McKenzie , T. D. Veal
DOI: 10.1063/1.3309694
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摘要: The electrical nature of muonium in the transparent conducting oxide material Ga2O3 is investigated via muon-spin rotation and relaxation spectroscopy. It found to be a shallow donor, with an effective donor depth 15≤ED≤30 meV hyperfine splitting 0.13±0.01 MHz. This contrast deep level observed majority semiconductors but supports recent suggestion that should across class oxides. These observations suggest hydrogen will also Ga2O3, important implications both for unintentional conductivity deliberate n-type doping this material.
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