Technique for high‐pressure electrical conductivity measurement in diamond anvil cells at cryogenic temperatures
作者： David Erskine , Peter Y. Yu , Gerard Martinez
DOI: 10.1063/1.1139296
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摘要: A technique is described for making four‐probe electrical conductivity measurements on bulk samples in a diamond anvil cell. The has been successfully applied up to 48 GPa and at temperatures below 4.2 K measure the superconducting transition (Tc, of Pb, GaP, Si. method analyzing resistance versus temperature curve vicinity also described. This determine pressure dependence Tc Si region where varies rapidly with pressure.
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