Optimization of p-silicon surface by etching and electrodeposition of Pt and Ni for photosplitting of water

摘要: Abstract The surface condition of a p-Si semiconductor was used to attempt optimize for the best photoresponse in terms etching time and electrodeposition Pt Ni electrocatalysts. bare etched with aqua regia-HF 4 min subsequent treatment HF 3 gave rise better active sites towards photoelectrochemical splitting water. Platinization s nickelization 1 on at current pulse 250 μA cm−2 light intensity 100 mW showed most efficient conditions this semiconductor. Platinum exhibited photoelectrocatalytic effect compared that nickel both limiting photocurrent potential shift, ΔV. electrocatalytic found be dominant over Schottky junction effect. Conventional equations were calculate efficiency surface, some necessary modifications. It has been suggested it is essential each time, strength prior its use cell water splitting.