作者: V.I. Kozlovsky , P.A. Trubenko , E.M. Dianov , Yu.V. Korostelin , A.B. Krysa
DOI: 10.1016/S0022-0248(98)80182-6
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摘要: Abstract ZnCdSe/ZnSe multiple quantum-well (MQW) structures were grown by MBE on ZnSe(0 0 1) substrates prepared seeded chemical-vapour transport (SCVT) in hydrogen. Scanning force microscopy (SFM) analysis of these was performed. A method for the preparation substrate surface found that resulted a decrease root-mean-square (RMS) roughness MQW structure surfaces, down to 1 nm. For intense cathodoluminescence (CL) from QWs observed. By e-beam pumping microcavity, pulse lasing achieved at room temperature (RT).