作者: J. K. Furdyna , J. A. Borchers , J. J. Rhyne , B. J. Kirby , K. V. O’Donovan
DOI: 10.1063/1.1867292
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摘要: Annealing can increase the Curie temperature and net magnetization in uncapped Ga1−xMnxAs films, effects that are suppressed when films capped with GaAs. Previous polarized neutron reflectometry (PNR) studies of revealed a pronounced gradient was reduced after annealing. We have extended this study to observe no or upon Furthermore, PNR measurements indicate annealing produces minimal differences depth-dependent magnetization, as both as-grown annealed feature significant gradient. These results suggest GaAs cap inhibits redistribution interstitial Mn impurities during