Shubnikov-de Haas effect in p-type Sb2 Te3
作者： A. von Middendorff , K. Dietrich , G. Landwehr
DOI: 10.1016/0038-1098(73)90472-9
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摘要: Abstract From the Shubnikov—De Haas-effect in p-type Sb2 Te3-crystals with carrier concentrations between 8.3 x 1019/ cm3 and 1.2 1020/ a two valence band model was deduced. For lower twelve valley is proposed, maxima located trigonal—binary planes. The energy difference bands derived as approximately 150 meV.
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