Measurement of effective mass in In0.9Ga0.1As0.22P0.78by Shubnikov–de Haas oscillations
作者： J. B. Restorff , Bland Houston , J. R. Burke , R. E. Hayes
DOI: 10.1063/1.89984
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摘要: The 0 K electron effective mass in an In0.9Ga0.1As0.22P0.78 epitaxial layer has been calculated from the temperature dependence of Shubnikov–de Haas oscillation amplitudes, giving m*=0.060m0. measured value is compared to values m*=0.059m0 and m*=0.058m0 obtained interpolations masses related binary compounds by two different methods.
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