Chapter 1 MBE Growth and Electrical Properties of Wide Bandgap ZnSe-based II-VI Semiconductors
作者： J. Han , R.L. Gunshor
DOI: 10.1016/S0080-8784(08)60191-X
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摘要: Publisher Summary The chapter discusses the role played by molecular beam epitaxy (MBE) in development of blue/green light emitters. It provides an insight into problems, including both sample growth and characterization, associated with MBE wide bandgap II-VI compound semiconductors. technique contributed much to II-VI. current low level extended defects, now l0 3 cm -2 , is respectable for any heterostructure system. ability form quantum well structures reach useful levels p n -doping, means forming ohmic contacts -ZnSe grow a variety alloys ZnSe led present injection laser diodes.
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