Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI
作者： R.L. Peterson , K.D. Hobart , H. Yin , J.C. Sturm
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摘要: Strain engineering by lateral relaxation is a powerful method for generating large biaxial and uniaxial silicon strain in an SOI structure. By choosing the crystal direction of features, one should be able to control not only mobility enhancement, but also maximize strain. Uniaxial tensile as 1.0% (100) can achieved 10 nm films.
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sci-hub.se 参考文章(3)
K. D. Hobart, F. J. Kub, M. Fatemi, M. E. Twigg, P. E. Thompson, T. S. Kuan, C. K. Inoki, Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides Journal of Electronic Materials. ,vol. 29, pp. 897- 900 ,(2000) , 10.1007/S11664-000-0177-2
S. C. Jain, B. Dietrich, H. Richter, A. Atkinson, A. H. Harker, Stresses in strained GeSi stripes: Calculation and determination from Raman measurements Physical Review B. ,vol. 52, pp. 6247- 6253 ,(1995) , 10.1103/PHYSREVB.52.6247
S.E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, Z. Ma, B. Mcintyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, Y. El-Mansy, A Logic Nanotechnology Featuring Strained-Silicon IEEE Electron Device Letters. ,vol. 25, pp. 191- 193 ,(2004) , 10.1109/LED.2004.825195