Defect sites in thin films of germanium dioxide irradiated with silicon ions
作者： O. N. Gorshkov , D. I. Tetel’baum , I. N. Antonov , A. N. Mikhailov , V. A. Kamin
DOI: 10.1134/S1027451007020024
关键词:
摘要: Optical transmission spectra of GeO2 films irradiated with silicon ions and subjected to postimplantation annealing in the regime nanocrystal formation are analyzed. It is shown that point defects form after irradiation doses D ∼ 1020 m−2: germanium electron centers, neutral oxygen vacancies, Ge2+ which have been annealed at a temperature 1000°C for an hour. At ≥ 1 × 1021 m−2, more complex arise films, only partially under same conditions.
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