Infrared lattice reflection spectra of III–V compound semiconductors

摘要: Abstract The fundamental lattice reflection band of InSb, InAs, GaSb and GaAs has been measured at liquid helium temperature with a grating spectrometer. By comparing the observed spectrum that calculated using single classical dispersion oscillator, following values transverse ( v 0 ) longitudinal l optical frequencies for long wavelength vibrations Szigeti effective ionic charge e ∗ 8 / are obtained: = 184.7 ± 3 cm −1 , 197.2 2, 0.42; InAs 218.9 243.3 0.56; 230.5 240.3 0.33; 273.3 297.3 0.51; InP 307 351 5, 0.68; AlSb 318 345 0.53 were obtained by reanalysis earlier room data. An empirical dependence on difference between atomic polarizabilities group III V atoms observed.