Temperature effects on characteristics and performance of near-infrared wide bandwidth for different avalanche photodiodes structures
作者： IS Amiri , Fatma Mohammed Aref Mahmoud Houssien , Ahmed Nabih Zaki Rashed , Abd El-Naser A Mohammed , None
DOI: 10.1016/J.RINP.2019.102399
关键词:
摘要: … of gap energy of the Si, GaAs and InGaAs materials is necessary … The energy of band gap in semiconductor material is … impact of phonons on the energy of band gap). The equations of …
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