Multi-impedance ferroelectric quantum tunnel junction on basis of ferroelectric coexistence domains and method for preparing multi-impedance ferroelectric quantum tunnel junction

摘要: The invention discloses a multi-impedance ferroelectric quantum tunnel junction on the basis of coexistence domains and method for preparing junction, belongs to technical field electronics. is junction. comprises four layers structures which are sequentially arranged from bottom top. top include single-crystal substrate, electrode, ultrathin insulating layer electrode; driving voltages can be applied in thickness direction by electrode when ranges 2 nm 5 mismatch strain between substrate positioned at phase boundary locations phase, magnitude changed, accordingly, polarization states insulatinglayer driven different domain structural with 3 types tunneling resistance.The have advantages that problems high energy consumption low read-write speed memory density existing magnetic junctions solved, mainly memories.