Degradation kinetics of amorphous silicon solar cells processed at high pressure and its relation to the nanostructure

摘要: In this study it is revealed that the light induced defects (LIDs) responsible for fast degradation of hydrogenated amorphous silicon (a-Si:H) solar cells under soaking are located at nanosized voids. This important breakthrough in identifying local environment LIDs has been achieved by detailed relation between nanostructure a-Si:H and metastability corresponding cell devices soaking. We propose a useful tool to define determine size distribution volume deficiencies, which range from small vacancies up The processing window used vary control dense based on hydrogen rich plasma unconventional high pressures (∼10 mbar). absorber layers with different distributions deficiencies subsequently incorporated devices. For first time clear nanostructures layer kinetics metastable during thermal annealing observed. ‘fast’ (first 10 hours soaking) strongly correlates density largest matrix. “slow” regime (10 tot 1000 appears be independent layer. addition, defect states ones annealed out relative low temperatures (120–130 C). Although processed higher pressure have same long term kinetics, their FF recovers much faster when compared standard dilution conditions.