Sol-gel based zirconium dioxide dielectrics by oxygen-annealing at low temperature for highly stable and robust flexible resistive random access memory
作者： Sang-Joon Park , Byoung-Soo Yu , Jun-Young Jeon , Byoung-Cheol Kang , Tae-Jun Ha
DOI: 10.1016/J.JALLCOM.2020.154086
关键词:
摘要: In this paper, flexible resistive random access memory (ReRAM) operating at 4 V with sol-gel based zirconium oxide (ZrO 2) film at 200° C is demonstrated. The memory performance …
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