Local electronic transport at grain boundaries in Nb-dopedSrTiO3
作者： Sergei V. Kalinin , Dawn A. Bonnell
DOI: 10.1103/PHYSREVB.70.235304
关键词:
摘要: The local electrostatic properties and electronic transport at $\ensuremath{\Sigma}5$ grain boundaries in donor-doped $\mathrm{Sr}\mathrm{Ti}{\mathrm{O}}_{3}$ bicrystals are examined using a combination of scanning probe microscopy (SPM) techniques impedance spectroscopy. A surface potential (SSPM) is used to determine intrinsic current-voltage capacitance-voltage characteristics the interface, eliminating bulk contact contributions. Conductive atomic force directly image depletion barrier associated with boundary. sign boundary unambiguously determined by SSPM once mobile charge effect taken into account. SPM spectroscopy allowed on static frequency dependent be established.
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