作者: In-Soo Jung , Yong-Hoon Son , Young-Eun Lee , Jong-wook Lee , Deok-Hyung Lee
DOI:
关键词:
摘要: A semiconductor device includes an inorganic insulating layer on a substrate, contact plug that extends through the to substrate and stress buffer spacer disposed between node layer. The further thin-film transistor (TFT) having source/drain region extending along plug. may include etch stop interposed substrate.