(Invited) Heterostructures for Everything: Device Principle of the 1980's?

摘要: One of the dominant themes semiconductor device R & D during 1980's will be incorporation heterostructures into most existing kinds devices, and emergence new devices made possible by heterostructures. In this paper power as a design tool is illustrated discussing several ways in which can improve bipolar transistor. The idea that energy gap variations are powerful way to control carrier flow; structures they permit electrons holes independently. Several applications principle discussed, going beyond familiar wide-gap emitter concept, including concepts not previously discussed literature. closes with brief discussion non-bipolar speculative future applications.