作者: K. Niranjan , Subhajit Dutta , Soney Varghese , Ajoy Kumar Ray , Harish C. Barshilia
DOI: 10.1007/S00339-017-0890-9
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摘要: We report the growth of flower-like ferromagnetic Cu-doped ZnO (CZO) nanostructures using electrochemical deposition on FTO-coated glass substrates. X-ray photoelectron spectroscopy studies affirmed presence Cu in with an oxidation state 2+. In order to find optimized dopant concentration, different concentrations 0.28, 0.30, 0.32, 0.35, 0.38, and 0.40 mM are applied their magnetic, optical, electrical properties studied. Magnetic moment increased increasing concentration up 0.35 then decreased further increase concentration. Diamagnetic pure showed nature even a low doping 0.28 mM. Band gap until value remained same for higher concentrations. It is ascribed Burstein–Moss effect. Defect-related broad photoluminescence (PL) peak observed visible range. contrast, samples sharp intense PL at 426 nm due Zn interstitials. Kelvin probe measurements revealed that Fermi level shifts toward conduction band respect material. Electron transport mechanism be dominated by space charge-limited current Schottky behavior improved ideality factor 0.38 Cu.