Preparation and properties of thermally evaporated lead germanate films

摘要: Ferroelectric lead germanate (Pb5Ge3O11) films were fabricated by thermal evaporation on n‐type silicon substrates. Characterization of the was made basis substrate temperature, rate evaporation, annealing time and their interdependence. The crystallinity film depends temperature; grown at room temperature are amorphous. At high temperatures crystalline can be obtained, but as‐grown which in nature found to nonferroelectric. conductivity these very much higher than that bulk crystals. This may attributed O2 deficiency films. loss stoichiometry recovered an atmosphere Pb 600 °C for 6 h. A clear dielectric anomaly, offset dc near transition good hysteresis loops observed annealed thickness ≳1 μm.