The Variation with Temperature of the Electrical Properties of a Degenerate Electronic Semiconductor as exemplified by Cadmium Oxide

作者: R W Wright

DOI: 10.1088/0370-1298/64/4/302

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摘要: Strong strip specimens are prepared from CdO powder such that they possess an electrical conductivity of the order 300 ohm-1cm-1 at room temperature. Simultaneous measurements Hall constant R and σ made throughout temperature range 0-500° C., thermoelectric power dE/dT is measured immediately afterwards on same specimen. The properties found to resemble those a metal: have value independent approximately 60 μV/deg. C. temperatures, whilst decreases with temperature, its 500° being roughly half 0° C theory degenerate semiconductors developed, since values indicate there number free electrons in each specimen, this result incorporated into comparison experimental results. Satisfactory agreement obtained between experiment Agreement also when compared results by another investigator for CdO. approximate form predicts resistivity should be directly proportional absolute confirm this. behaves as excess semiconductor, strongly resembling metal.

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