Tunneling in Hydrogenated Amorphous Silicon
作者： I. Balberg , D. E. Carlson
DOI: 10.1103/PHYSREVLETT.43.58
关键词:
摘要: For the first time, structure has been found in electron tunneling characteristics of a metal-oxide-semiconductor tunnel junction an amorphous semiconductor. In present study semiconductor is phosporus-doped hydrogenated silicon. The results have analyzed to determine surface density states over part forbidden gap. basic features density-of-states distribution are agreement with field-effect measurements reported for this material.
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